Cvd Graphene Copper Etching

Advanced materials 2016 28 29 6247 6252.

Cvd graphene copper etching. The pmma pva graphene copper foil block was floated on the surface of a solution of 0 3 m ammonium persulfate aldrich 98 at 0 c for 24 h to etch the copper foil. In addition we found that the etching is temperature dependent. We report a simple clean and highly anisotropic hydrogen etching method for chemical vapor deposited cvd graphene catalyzed by the copper substrate. 2a and b show the etching time evolution of the graphene domain size on the copper foils etched by an fecl 3 or an nh 4 2 s 2 o 8 etchant.

For the fecl 3 etchant we found that the average size of the. If the raman spectra of bilayer graphene transferred to pet wafer is compared to that the one of bilayer graphene on copper figure 2 a it can be concluded that the different transfer steps affected the. Figure 4 shows the raman spectra of the cvd grown bilayer graphene transferred onto pet wafers using the three different etching solutions. Wei guo feng jing jian xiao ce zhou yuanwei lin shuai wang.

Here to investigate the size and density of the graphene domains the cvd growth of graphene was terminated by stopping the ch 4 feedstock prior to covering the entire cu surface. After the copper was etched the pmma pva graphene block was rinsed with deionized water three times at 0 c and transferred onto a 100 nm thick sio 2 si substrate.